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                                    | 2004 | No.2
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					  L. Trapaidze, T. Butkhuzi, T. Khulordava, M. Sharvashidze, L. Aptsiauri, E. Kekelidze
					 
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							| Investigation of ZnO layers treated by
    rbqe method |  144-150 |   or Annotation 
 
						  M. Gochitashvili, I. Noselidze, T. Chighvinadze , R. Lomsadze
						 
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								| Polarization measurements in the He+ - N2 collisions |  151-161 |  ) or Annotation 
 
							  M. Gochitashvili, R. Lomsadze, B. Lomsadze, N. Mosulishvili, G. Sakhelashvili
							 
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									| The efficiency of an electrostatic energy analyzer in ion-
     atom collisions |  162-168 |   or Annotation 
 
								  Z. Khvedelidze, J. Dolidze, D. Chitaladze, A. Chitaladze, N. Pavlenishvili
								 
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										| Short –term progress of precipitation with use of synoptic-statistical
methods (the conditions of east Georgia are considered) |  169-173 |   or Annotation 
 
									  Z. Gogiashvili, O. Namicheishvili, G. Shonia
									 
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											| Continuous adaptation of
      threshold bodies on algorithm of the unified encouragement and
      individual punishment (UEIP) |  173-181 |   or Annotation 
 
										  K. Tukhashvili, V. Kandashvili, K. Otarashvili
										 
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												| The possible mechanizm
      of semiannual variations in the ionosphere by data of Tbilisi Sity |  182-191 |   or Annotation 
 
											  A.Lomidze
											 
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													| Modified method of hyperspherical function for three-particle
    system in 3d space when pair interaction between particles is (a/r2+b/r) |  192-200 |   or Annotation 
 
												  T.Chelidze, T.Sichinava, T. Kereselidze
												 
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														| Excitons in ZnSe/CdSe quantum
    dots  molecules |  201-209 |   or Annotation 
 
													  T. Gvarjaladze, A. Lomidze, S. Chkhaidze
													 
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															| Quantization of sine-Gordon
     equation soliton and φ4 kink equation using eikonal approach |  210-223 |   or Annotation 
 
														  S. Gotoshia
														 
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																| Photoluminescence of epitaxial films of GaxAl1-xP doped by various concentration of zinc and tellurium |  224-235 |   or Annotation 
 
															  S. Gotoshia
															 
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																	| The use of laser Raman spectroscopy for study semiconductors
     fundamental properties and diagnostics-identification |  236-261 |   or Annotation 
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